Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2019, 10, 1125–1130, doi:10.3762/bjnano.10.112

• temperature on the initial electrical characteristics and photo-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). The extracted electrical parameters from transfer curves suggest that a low-temperature treatment maintains a high density of defects in the IGZO

• irrespective of treatment temperature. NBIS-induced critical instability occurs in the high-temperature-annealed TFT. Keywords: metal oxide; photo-induced instabilities; photon energy; thermal annealing; thin-film transistor (TFT) device; Introduction The rapid process of industrialization and

• this work, we investigate the impact of annealing temperature on the initial electrical characteristics and photo-induced instabilities in a-IGZO TFTs. The obtained electrical parameters imply that low- and high-temperature annealing leverage the generation of defects in the active layer as well as its